Zener Diodes BZX79-C5V6/SOD27/ALF2

Zener Diode, 7.5V, 2%, 0.35W, Silicon, Unidirectional

Zener Diode, 4.7V, 4.99%, 0.41W, Silicon, Unidirectional

Nexperia BZT52-C7V5 - Single Zener Diode, SOD123

Nexperia BZV90-C16 Zener Diode, 16V, 5%, 1.5W, Unidirectional, SC-73

BZX84 - Zener Diode Low-power voltage

Digital Signal Processor, 24-Ext Bit

Nexperia HEF4060BT-Q100 - Binary Counter, 4000/14000/40000 Series, Asynchronous, Negative Edge Triggered, 14-Bit, Up Direction, CMOS, PDSO16

Nexperia ON5452 - RF Power MOSFET

Nexperia PDTC114TMB Small Signal Bipolar Transistor, 0.1A, 50V, NPN, XQFN3

PESD12VSA-L - ESD Protection Diode Very Low Capitance

PESD5V0C1B - Trans Voltage Suppressor Diode, 5V, Bidirectional

Nexperia PESD5V0F5UV Trans Voltage Suppressor Diode, 5V, Unidirectional, 5 Element, SOT6

Small Signal Bipolar Transistor, 3A, 100V, 2-Element, NPN, Silicon

Power Bipolar Transistor, 10A, 100V, NPN, Silicon, MO-235, Plastic/Epoxy, 4 Pin

100V, 1A low leakage current Schottky barrier rectifier

Small Signal Field-Effect Transistor, 2.8A, 20V, P-Channel, Silicon, MOSFET, TO-236AB

Nexperia PMZB320UPE - Small Signal Field-Effect Transistor, 1A, 30V, P-Channel, MOSFET

Power Field-Effect Transistor, 150A, 40V, 0.0017ohm, N-Channel MOSFET TO-220AB

TRANSISTOR, PNP SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:145MHz; Power Dissipation Pd:1.35W; DC Collector Current:-1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-223; No. of Pins:4Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (15-Jan-2018); Av Current Ic:1.5A; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:150mA; Gain Bandwidth ft Min:115MHz; Gain Bandwidth ft Typ:115MHz; Hfe Min:100; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:1.3W; SMD Marking:BCP53/16; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar; Voltage Vcbo:100V