MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:6.25W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Id Max:5A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:20A; Row Pitch:6.3mm; SMD Marking:PHK5NQ15T; Termination Type:Surface Mount Device; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

TRANSISTOR, PNP, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:830mW; DC Collector Current:1A; DC Current Gain hFE:250hFE; Transistor Case Style:TO-92; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-500mV; Continuous Collector Current Ic Max:1.5A; Current Ic Continuous a Max:-500mA; Current Ic hFE:500mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:40; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:830mW; Termination Type:Through Hole; Voltage Vcbo:100V

MOSFET, P, SOT-23 REEL 3K; Transistor Polarity:P Channel; Continuous Drain Current Id:750mA; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:680mV; Power Dissipation Pd:417mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Id Max:-750mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:500mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:417mW; Pulse Current Idm:3A; Reel Quantity:3000; Tape Width:8mm; Termination Type:Surface Mount Device; Voltage Vds Typ:-12V; Voltage Vgs Max:-8V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th P Channel Min:0.68V

Bipolar Transistors - Pre-Biased PDTD143ET-Q/SOT23/TO-236AB

Bipolar Transistors - BJT BCM846BSH-Q/SOT363/SC-88

Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 100mA 250MHz 200mW Surface Mount 6-TSSOP

Schottky Diodes & Rectifiers BAT54J-Q/SOD323F/SOD323F

Zener Diodes BZX8450-C27-Q/SOT23/TO-236AB

Small Signal Switching Diodes BAV170-Q/SOT23/TO-236AB

ESD Protection Diodes / TVS Diodes MMBZ16VZLS-Q/SOD882BD/XSON2

Bipolar (BJT) Transistor NPN 60 V 100 mA 100MHz 250 mW Surface Mount TO-236AB

Schottky Diodes & Rectifiers PMEG2005EH-Q/SOD123F/SOD2

Zener Diodes PDZ4.7B-Q/SOD323/SOD2

Zener Diodes PDZ6.8B-Q/SOD323/SOD2