IGBT MODULE 1.2KV 100A; Transistor Po; IGBT MODULE 1.2KV 100A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:625W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:35Pins