Description

IGBT MODULE 1.2KV 100A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:780W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7Pins ;RoHS Compliant: No