Description

IGBT Module; Transistor Polarity:N Channel; DC Collector Current:1kA; Collector Emitter Saturation Voltage Vce(on):3.1V; Power Dissipation Pd:5.8kW; Collector Emitter Voltage V(br)ceo:1.4kV; No. of Pins:4Pins; Product Range:- ;RoHS Compliant: No