MT29F1G08ABADAH4-IT:D
Part Number : MT29F1G08ABADAH4-IT:D
Micron Technology, IncNAND Flash SLC 1G 128MX8 FBGA
MT53E512M32D1FW-046 WT:B
Part Number : MT53E512M32D1FW-046 WT:B
Micron Technology, IncDRAM Chip LPDDR4 SDRAM 16Gbit 512M X 32 1.1V 200-Pin TFBGA
MT53E512M32D1ZW-046 AUT:B
Part Number : MT53E512M32D1ZW-046 AUT:B
Micron Technology, IncWFBGA-200 / A�/ DRAM LPDDR4 256MX32
MT53E512M32D2-FW-046 IT:D
Part Number : MT53E512M32D2-FW-046 IT:D
Micron Technology, IncDRAM Chip Mobile LPDDR4 SDRAM 16Gbit 512M X 32 1.1V/1.8V 200-Pin TFBGA
MT53B256M16D1Z00MWC1S
Part Number : MT53B256M16D1Z00MWC1S
Micron Technology, IncLPDDR4 4G DIE 256MX16
MT57W512H36JF-4
Part Number : MT57W512H36JF-4
Micron Technology, IncSRAM - DDR2 Memory IC 18Mb (512K x 36) Parallel 250 MHz 4 ns 165-FBGA (13x15)
MT58L512L18FF-8.5
Part Number : MT58L512L18FF-8.5
Micron Technology, IncSRAM - Standard Memory IC 8Mbit Parallel 100 MHz 8.5 ns 165-FBGA (13x15)
MT41K256M16TW-107 XIT:P.
Part Number : MT41K256M16TW-107 XIT:P.
Micron Technology, IncDDR34G256MX16FBGA, TRAY, DRAM; DDR34G256MX16FBGA, TRAY, DRAM
MT46V32M16P-5B IT:J.
Part Number : MT46V32M16P-5B IT:J.
Micron Technology, IncDRAM, 32M X 16BIT, -40 TO 85DEG C; DRAM Type:DDR; DRAM Density:512Mbit; DRAM Memory Configuration:32M x 16bit; Clock Frequency:200MHz; Memory Case Style:TSOP; No. of Pins:66Pins; Supply Voltage Nom:2.5V; Access Time:5ns
