LPDDR4

UFS 512G

Solid State Drive SED 3.84TB FLASH - NAND (TLC) NVMe PCIe

Combo Mem LPDDR4 2Gbits + SLC NAND 4Gbits 1.8V/1.1V 149-Pin T/R

LPDDR4

PCM (PRAM) Memory IC 128Mb (16M x 8) Parallel, SPI 115 ns 64-EasyBGA (8x10)

SRAM - Quad Port, Synchronous Memory IC 18Mb (512K x 36) Parallel 167MHz 6ns 165-FBGA (13x15)

FLASH TOP BLOCK 2MB, SMD, 29W200; Flash Memory Type:Parallel NOR; Memory Size:2Mbit; Flash Memory Configuration:-; IC Interface Type:Parallel; Memory Case Style:TSOP; No. of Pins:48Pins; Clock Frequency:-; Access Time:70ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:3V Parallel NOR Flash Memories; RoHS Phthalates Compliant:To Be Advised; MSL:MSL 3 - 168 hours; SVHC:No SVHC (17-Dec-2015); Base Number:29; IC Generic Number:29W200; Logic Function Number:200; Memory Type:Flash; Memory Voltage Vcc:3V; Sector Type:Top Boot; Termination Type:Surface Mount Device; Voltage Vcc:3V

ZBT SRAM, 128KX32, 5ns PQFP100

ZBT SRAM, 512KX32, 3.2ns PQFP100

Cache SRAM, 128KX36, 2.8ns PBGA165

Cache SRAM, 256KX18, 10ns PQFP100

Cache SRAM, 256KX18, 8.5ns PQFP100

Cache SRAM, 256KX32, 3.5ns PQFP100

Cache SRAM, 256KX32, 10ns PQFP100

Cache SRAM, 256KX32, 4ns PQFP100

Cache SRAM, 256KX32, 3.5ns PQFP100

Cache SRAM, 256KX36, 4ns PQFP100