Description

IGBT MODULE DUAL NPN 1.2KV 160A; Transistor Polarity:Dual NPN; DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:1kW; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7