Description

MOSFET N RF TO-268AA; Drain Source Voltage Vds:500V; Continuous Drain Current Id:28A; Power Dissipation Pd:315W; Operating Frequency Min:-; Operating Frequency Max:500kHz; RF Transistor Case:TO-268; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:3000pF; On Resistance Rds(on):190mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:315W; Rise Time:13ns; Termination Type:Surface Mount Device; Threshold Voltage Vgs:4V; Transistor Case Style:TO-268; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:500V; Voltage Vgs Rds on Measurement:10V