Discrete Semiconductor Modules 72 Amps 800V

IGBT NPT 1700V 6A TO-268.

Solid State SPST-NO (1 Form A) 8-SIP, 4 Leads

Rectifiers

N-Channel 600V 28A (Tc) 695W (Tc) Through Hole TO-247AD (IXFH)

Rectifiers Fast Diode

IGBT, 1.2KV, 175A, 650W, TO-247;

RECTIFIER, 1.6KV, 80A, TO-247;

Discrete Semiconductor Modules

Rectifiers Fast Diode

SCR Module 1.2kV 180A Common Cathode - All SCRs Chassis Mount ECO-PAC2

IXYS IX4426MTR 2 8-Pin, DFN, Topology: Low Side, Mounting Type: Surface Mount, Peak Output Current: 1.5A

TrenchP Channel Power MOSFETs, Package Style: ISOPLUS247

Rectifiers

IGBT,1200V,20A,TO-263; DC Collector Current:20A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:85W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-263AB; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:85W; Transistor Type:IGBT

IGBT, ISOPLUS220; DC Collector Current:20A; Collector Emitter Saturation Voltage Vce(on):3V; Power Dissipation Pd:63W; Collector Emitter Voltage V(br)ceo:-; Transistor Case Style:ISOPLUS-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Ic Continuous a Max:20A; Fall Time tf:35ns; Junction to Case Thermal Resistance A:2°C/W; Pin Configuration:Copack (FRD); Rise Time:35ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:600V

VHV (2500V-3000V), Package Style: TO-268

Z16F ZNEO MCU, Package Style: LQFP

Discrete Semiconductor Modules 95 Amps 800V

Discrete Semiconductor Modules 44 Amps 800V