IXYS
MOSFET N SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:800V; On Resistance Rds(on):320mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:520W; Transistor Case Style:ISOTOP; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Avalanche Single Pulse Energy Eas:2.5J; Current Id Max:27A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:320mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:108A; Repetitive Avalanche Energy Max:60mJ; Termination Type:Screw; Voltage Vds Typ:800V; Voltage Vgs Max:4.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Weight:0.04kg