pHEMT MM-Wave Applications & Power pHEMT Devices, Package Style: 70, 73/71

Broadband, High Gain, Package Style: 70, 73/71

RF MOSFET N CHANNEL 500V DE-275; Drain Source Voltage Vds:500V; Continuous Drain Current Id:16A; Power Dissipation Pd:590W; Operating Frequency Min:-; Operating Frequency Max:100MHz; RF Transistor Case:DE-275; No. of Pins:6Pins; Operating Temperature Max:175°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Transistor Polarity:N Channel; Transistor Type:RF MOSFET

DE Series (DE Package), Package Style: 275x2

MOSFET N RF TO-247AD; Drain Source Voltage Vds:500V; Continuous Drain Current Id:21A; Power Dissipation Pd:300W; Operating Frequency Min:-; Operating Frequency Max:500kHz; RF Transistor Case:TO-247AD; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:2600pF; On Resistance Rds(on):250mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:300W; Rise Time:12ns; Termination Type:Through Hole; Threshold Voltage Vgs:5.5V; Transistor Case Style:TO-247AD; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:500V; Voltage Vgs Rds on Measurement:10V

F Series (Industry Standard Packages), Package Style: TO-268

DE Series (DE Package), Package Style: 375

F Series (Industry Standard Packages), Package Style: PLUS247

MOSFET N RF SOT-227B; Drain Source Voltage Vds:500V; Continuous Drain Current Id:55A; Power Dissipation Pd:600W; Operating Frequency Min:-; Operating Frequency Max:500kHz; RF Transistor Case:SOT-227B; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:6700pF; On Resistance Rds(on):85mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:600W; Rise Time:20ns; Termination Type:Screw; Threshold Voltage Vgs:5.5V; Transistor Case Style:ISOTOP; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:500V; Voltage Vgs Rds on Measurement:10V

MOSFET N RF DE375; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:12A; Power Dissipation Pd:940W; Operating Frequency Min:-; Operating Frequency Max:50MHz; RF Transistor Case:DE-375; No. of Pins:6Pins; Operating Temperature Max:175°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:2000pF; Current Id Max:12A; On Resistance Rds(on):950mohm; Operating Temperature Min:-55°C; Rds(on) Test Voltage Vgs:15V; Rise Time:3ns; Threshold Voltage Vgs:5.5V; Transistor Case Style:DE-375; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:1kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:15V

MOSFET N RF ISOPLUS247; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:8A; Power Dissipation Pd:250W; Operating Frequency Min:-; Operating Frequency Max:-; RF Transistor Case:ISOPLUS247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:1960pF; On Resistance Rds(on):2.1ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Power Dissipation Max:3W; Rise Time:5ns; Termination Type:Through Hole; Threshold Voltage Vgs:6.5V; Transistor Case Style:ISOPLUS-247; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:1.2kV; Voltage Vgs Rds on Measurement:20V

Standard Gain Block Modules

Standard Gain Block Modules

Standard Gain Block Modules

Standard Gain Block Modules

Standard Gain Block Modules

Standard Gain Block Modules

Standard Gain Block Modules

Standard Gain Block Modules

MOSFET Driver Ics, Package Style: SOIC-28 w/heat slug