IGBT 650 V 15 A 53 W Through Hole TO-220 Isolated Tab

IGBT Module PT Single 600 V 280 A 940 W Chassis Mount SOT-227B

Rectifiers

Rectifiers

Gate Drivers 4A Dual Low-Side Ultrafast Mosfet DRV

IGBT SINGLE 650V 50A TO-247; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017)

Rectifiers 200V 2X123A

DIODE RECT 1200V 2X128A ECO-PAC2; Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):128A; Forward Voltage VF Max:1.9V; Diode Module Configuration:Dual Isolated; Packaging:Each; Product Range:DSEI2 Series; SVHC:No SVHC (12-Jan-2017); Diode Configuration:Dual Isolated; Diode Type:Fast Recovery; Forward Surge Current Ifsm Max:1.32kA; No. of Phases:Single; No. of Pins:12Pins; Operating Temperature Max:150°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C; Reverse Recovery Time trr Max:40ns

CS45 Series 1600 Vrrm 48 A 1.64 Vt Phase Control Thyristor - TO-247 AD

Thyristor 1200 V 100 mA 38 A 60 A SOT-227B 4 ;RoHS Compliant: Yes

DIODE FAST 120A SOT-227B; Repetitive Reverse Voltage Vrrm Max:300V; Forward Current If(AV):60A; Forward Voltage VF Max:1.68V; Diode Module Configuration:Dual Isolated; Packaging:Each; Product Range:DSEP2 Series; SVHC:No SVHC (12-Jan-2017); Case Temperature Tc @ If:75°C; Current If @ Vf:60A; Diode Case Style:SOT-227B; Diode Configuration:Dual Isolated; Diode Type:Soft Recovery; Forward Surge Current Ifsm Max:600A; Forward Voltage:1.26V; Junction to Case Thermal Resistance A:0.85°C/W; Module Configuration:Dual; No. of Phases:Single; No. of Pins:4Pins; Operating Temperature Max:150°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C; Pin Configuration:Dual; Reverse Recovery Time trr Max:30ns; Reverse Recovery Time trr Typ:30ns; Termination Type:Screw; Time on for IFSM:10ms

DSE Series 300 Vrrm 90 A 30 ns Fast Recovery Epitaxial Diode - SOT-227 B

VHF Series 1600 Vrrm 40 A Half Controlled Single Phase Rectifier Bridge

DSEP2X101-04A Series 400 V 100 A High Performance Fast Recovery Diode - SOT-227B

MOSFET N-CH 650V 22A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation;RoHS Compliant: Yes

MOSFET N-CH 650V 80A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation;RoHS Compliant: Yes

MOSFET N-CH 650V 8A TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation ;RoHS Compliant: Yes

IXTK102N65X2 Series 650 V 102 A N-Channel Enhancement Mode Power MOSFET-TO-264-3

MOSFET N-CH 650V 12A TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power ;RoHS Compliant: Yes

MOSFET N-CH 650V 4A TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation ;RoHS Compliant: Yes