IXYS
MOSFET N PLUS-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):750mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:780W; Transistor Case Style:PLUS247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Avalanche Single Pulse Energy Eas:2J; Current Id Max:20A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:160nC; No. of Transistors:1; On State Resistance Max:750mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:80A; Rate of Voltage Change dv / dt:5V/ns; Repetitive Avalanche Energy Max:40mJ; Reverse Recovery Time trr Typ:300ns; Termination Type:Through Hole; Voltage Vds Typ:1.2kV; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Weight:6g