IXDN604 Series 35 V 4 A Dual Low-Side Ultrafast MOSFET Driver - SOIC-8

SCRs 1400V 60A

Single 650 V 170 A Surface Mount PT IGBT - SOT-227B MiniBLOC

Discrete Semiconductor Modules 85 Amps 1600V

Schottky Diodes & Rectifiers 220 Amps 80V

Discrete Semiconductor Modules 110 Amps 1600V

Rectifiers 180 Amps 600V

DSEP2X101-04A Series 400 V 100 A High Performance Fast Recovery Diode - SOT-227B

MOSFET N-CH 650V 22A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation;RoHS Compliant: Yes

MOSFET N-CH 650V 80A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation;RoHS Compliant: Yes

MOSFET N-CH 650V 8A TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation ;RoHS Compliant: Yes

IXTK102N65X2 Series 650 V 102 A N-Channel Enhancement Mode Power MOSFET-TO-264-3

MOSFET N-CH 650V 12A TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power ;RoHS Compliant: Yes

MOSFET N-CH 650V 4A TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation ;RoHS Compliant: Yes

IGBT N-CH 1.2KV 165A SOT-227B; Transistor Polarity:N Channel; DC Collector Current:165A; Collector Emitter Saturation Voltage Vce(on):2.6V; Power Dissipation Pd:690W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case ;RoHS Compliant: Yes

SCR THYRISTOR 180A 2.2KV TO-240AA; SCR Module Type:Series Connected - SCRs; Peak Repetitive Off-State Voltage Vdrm:2.2kV; Gate Trigger Current Max Igt:150mA; Current It av:104A; On State RMS Current IT(rms):180A; Peak Non Rep Surge Current Itsm 50Hz:1.7kA; Holding Current Max Ih:150mA; Gate Trigger Voltage Max Vgt:1.5V; Operating Temperature Max:125°C; Product Range:-; SVHC:No SVHC (12-Jan-2017); MSL:MSL 1 - Unlimited; No. of Pins:7Pins; Thyristor Case Style:TO-240AA

SCR THYRISTOR 50A 1.6KV TO-240AA; SCR Module Type:Series Connected - SCR / Diode; Peak Repetitive Off-State Voltage Vdrm:1.6kV; Gate Trigger Current Max Igt:100mA; Current It av:27A; On State RMS Current IT(rms):50A; Peak Non Rep Surge Current Itsm 50Hz:520A; Holding Current Max Ih:200mA; Gate Trigger Voltage Max Vgt:1.5V; Operating Temperature Max:100°C; Product Range:-; SVHC:No SVHC (12-Jan-2017); MSL:MSL 1 - Unlimited; No. of Pins:5Pins; Thyristor Case Style:TO-240AA

Rectifiers 200V 2X123A

MOSFET N SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:400W; Transistor Case Style:ISOTOP; No. of Pins:3; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Id Max:15A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:600mohm; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C; Pulse Current Idm:60A; Voltage Vds Typ:1kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

N-Channel 40 V 220 A 3.5 mO Surface Mount TrenchT2 Power Mosfet - TO-263