Polar Hiperfets (500V To 1200V) With Reduced Rds(On), Package Style: PLUS220

Polar Hiperfets (500V To 1200V) With Reduced Rds(On), Package Style: TO-3P

Polar Hiperfets (500V To 1200V) With Reduced Rds(On), Package Style: ISOPLUS247

Standard Hiperfets (50V To 1200V), Package Style: TO-247

Polar Hiperfets (500V To 1200V) With Reduced Rds(On), Package Style: PLUS220 SMD

Polar Hiperfets (500V To 1200V) With Reduced Rds(On), Package Style: TO-268

Q-Class Hiperfets, Package Style: ISOPLUS220

Q-Class Hiperfets, Package Style: TO-247

Polar Hiperfets (500V To 1200V) With Reduced Rds(On), Package Style: TO-268

Single N-Channel 800 Vds 320 mOhm 520 W Power Mosfet - SOT-227B

MOSFET N TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:800V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:8800pF; Current Id Max:32A; Junction to Case Thermal Resistance A:0.15°C/W; N-channel Gate Charge:150nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:250ns; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

MOSFET N SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:800V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:694W; Transistor Case Style:ISOTOP; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:12000pF; Current Id Max:39A; Junction to Case Thermal Resistance A:0.12°C/W; N-channel Gate Charge:200nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:250ns; Termination Type:Screw; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Q2-Class Hiperfets, Package Style: TO-264

MOSFET N TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:800V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.2kW; Transistor Case Style:TO-264; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:12000pF; Current Id Max:44A; Junction to Case Thermal Resistance A:0.12°C/W; N-channel Gate Charge:198nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:250ns; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Q3-Class Hiperfets, Package Style: SOT-227B

Q2-Class Hiperfets, Package Style: SOT-227

Standard Hiperfets (50V To 1200V), Package Style: TO-204

Standard Hiperfets (50V To 1200V), Package Style: TO-247

Polar Hiperfets (500V To 1200V) With Reduced Rds(On), Package Style: PLUS220SMD

Polar Hiperfets (500V To 1200V) With Reduced Rds(On), Package Style: ISOPLUS247