IXYS
MOSFET N SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:300V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:700W; Transistor Case Style:ISOTOP; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Avalanche Single Pulse Energy Eas:6J; Current Id Max:130A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:380nC; No. of Transistors:1; On State Resistance Max:22mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:520A; Rate of Voltage Change dv / dt:5V/ns; Repetitive Avalanche Energy Max:85mJ; Reverse Recovery Time trr Typ:250ns; Termination Type:Screw; Voltage Vds Typ:300V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V