N-Channel 25 V 15A (Ta), 51A (Tc) 3.6W (Ta), 26W (Tc) Surface Mount 8-PQFN (5x6)

35CGQ150 Series 1.18 V 35 A High Efficiency Schottky Rectifier - TO-254AA

N Channel 100 V 0.3 O 20 W 18 nC Through Hole HexFet Power Mosfet - TO-39

JANTX Series 200 V 1.5 Ohm 2.5 A Through Hole Hexfet Transistor - TO-39

Half-Bridge Gate Driver IC Non-Inverting 44-PLCC, 32 Leads (16.58x16.58)

MOSFET, N, 150V, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.2A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipa

IGBT 600 V 65 A 250 W Through Hole TO-262

IGBT 1200 V 70 A 320 W Through Hole TO-247AD

N-Channel 40 V 100A (Tc) 99W (Tc) Through Hole PG-TO251-3-901

MOSFET, N, 20V, 54A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:54A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:71W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Id Max:54A; Junction to Case Thermal Resistance A:2.1°C/W; On State resistance @ Vgs = 10V:14ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:210A; Voltage Vds Typ:20V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V