MOSFET, DUAL, P, TSSOP-8; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-900mV; Power Dissipation Pd:1W; Transistor Case Style:TSSOP; No. of Pins:8Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:-4.3A; Module Configuration:Dual; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:17A; Termination Type:Surface Mount Device; Voltage Vds:12V; Voltage Vds Typ:-12V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-0.4V; Voltage Vgs th Min:-0.9V

IGBT, 300V, FULLPAK-220; Collector Emitter Saturation Voltage Vce(on):1.25V; Power Dissipation Pd:39W; Collector Emitter Voltage V(br)ceo:300V; Transistor Case Style:TO-220FP; No. of Pins:3Pins; MSL:-; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:TO-220FP; Current Ic Continuous a Max:28A; Power Dissipation Max:39W; Pulsed Current Icm:170A; Transistor Polarity:N Channel

AUIRFS4115 - 120V-300V N-Channel Automotive MOSFET

IGBT Trench 600 V 76 A 268 W Through Hole TO-247AD