MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:14A; External Length / Height:1.75mm; External Width:4.05mm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:110A; Row Pitch:6.3mm; SMD Marking:F7477; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V

THYRISTOR, 22A 400V TO-48; Peak Repetitive Off-State Voltage, Vdrm:400V; Gate Trigger Current Max, Igt:60mA; Current It av:22A; On State RMS Current IT(rms):35A; Gate Trigger Voltage Max Vgt:2V; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Itsm:335A; Repetitive Reverse Voltage Vrrm Max:400V; Thread Size:10-32UNF; Thyristor Type:Thyristor

THYRISTOR, 25A 400V TO-48; Peak Repetitive Off-State Voltage, Vdrm:400V; Gate Trigger Current Max, Igt:60mA; Current It av:25A; On State RMS Current IT(rms):40A; Gate Trigger Voltage Max Vgt:2V; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Itsm:350A; Repetitive Reverse Voltage Vrrm Max:400V; Thread Size:10-32UNF; Thyristor Type:Thyristor

MOSFET, N, DIRECTFET, ST; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:12V; Power Dissipation Pd:2.1W; Transistor Case Style:DirectFET ST; No. of Pins:7Pins; Operating Temperature Max:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Capacitance Ciss Typ:2120pF; Charge Qrr @ Tj = 25°C Typ:33nC; Current Id Max:9.4A; Current Temperature:25°C; External Depth:4.85mm; External Length / Height:0.7mm; External Width:3.95mm; Full Power Rating Temperature:25°C; IC Package (Case style):ST; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; No. of Transistors:1; On State Resistance Max:9mohm; Pulse Current Idm:100A; Reverse Recovery Time trr Typ:31ns; SMD Marking:6608; Voltage Vds:30V; Voltage Vgs Max:12V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V

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