Description

MOSFET N, DIRECTFET MP; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Pd:2.3W; Transistor Case Style:-; No. of Pins:-; Operating Temperature Max:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Capacitance Ciss Typ:1250pF; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Pulse Current Idm:132A; Reverse Recovery Time trr Typ:18ns; SMD Marking:6633; Termination Type:Surface Mount Device; Voltage Vds:20V