MOSFET N 55V 150A TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Id Max:75A; Junction to Case Thermal Resistance A:0.65°C/W; On State resistance @ Vgs = 10V:4.9ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:600A; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

MOSFET N LOGIC MICRO-6; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:1.7W; Transistor Case Style:µSOIC; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 2 - 1 year; SVHC:No SVHC (27-Jun-2018); Capacitance Ciss Typ:300pF; Charge Qrr @ Tj = 25°C Typ:37nC; Current Id Max:3.2A; Current Temperature:25°C; External Depth:3mm; External Length / Height:1.45mm; External Width:3mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:4.7nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:18A; Rate of Voltage Change dv / dt:5V/ns; Reverse Recovery Time trr Typ:40ns; SMD Marking:2A; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:12V

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