Microcontroller MCU 16-bit

DRAM DDR SDRAM 128MByte 3V 24-Ball FBGA T/R

MOSFET, N I-PAK 30V; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Dissipation Pd:135W; Transistor Case Style:TO-251AA; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:250mJ; Capacitance Ciss Typ:4880pF; Current Id Max:160A; Full Power Rating Temperature:25°C; N-channel Gate Charge:39nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pin Configuration:G(1), D(2), S(3); Pulse Current Idm:640A; Repetitive Avalanche Energy Max:13.5mJ; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V

MOSFET, N SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Charge Qrr @ Tj = 25°C Typ:33nC; Current Id Max:4.5A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:36A; Termination Type:Surface Mount Device; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V

FIFO Mem Sync Dual Depth/Width Uni-Dir 4K x 18 64-Pin TQFP

SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 15ns 32-Pin SOJ

SRAM Chip Async Dual 3.3V 576K-Bit 32K x 18 20ns 100-Pin TQFP