Trans GP BJT PNP 32V 0.8A 3-Pin SOT-23 T/R

Trans GP BJT PNP 45V 0.8A 3-Pin SOT-23 T/R

Single N-Channel 200 V 3.5 Ohm 11 nC SIPMOS? Power Mosfet - SOT-223

IDD08SG60C Series 600V 8 A 3rd Generation thinQ!™ SiC Schottky Diode-PG-TO-252-3

SMBTA56 - General Purpose Transistor

BTS724G Series 40 V 90 mOhm SMT Smart High-Side Power Switch - PG-DSO-20

PVI5033R Series 5V 5?A 2 Channel Photovoltaic Isolator Through Hole - DIP-8

Single N-Channel 600 V 600 mOhm 20.5 nC CoolMOS? Power Mosfet - TO-252-3

MOSFET N CH 600V 20.2A TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:151W; Transistor Case Style:TO-263; No. of Pins:2Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017); Current Id Max:20.2A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

IPP60R950 - 600V CoolMOS N-Channel Power MOSFET

MOSFET N CH 600V 23.8A TO220-FP; Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:34W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Id Max:23.8A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

MOSFET N CH 600V 20.2A TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:151W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Id Max:20.2A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

Trans MOSFET N-CH 30V 23A 8-Pin PQFN EP T/R

MOSFET N CH 30V 9.9A 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:79A; Voltage Vgs th Max:1.1V; Voltage Vgs th Min:0.5V

MOSFET N CH 30V 23A DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:75W; Transistor Case Style:DirectFET MX; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017); Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C; Pulse Current Idm:180A; Voltage Vgs th Min:1.35V

Gate Drivers 3-Phase Bridge DRVR 600V 10V to 20V

IPL65R099C7 - 650V CoolMOS N-Channel Power MOSFET

GATE DRIVER CURR SENSE 1CH 8DIP; Driver Configuration:High Side and Low Side; Peak Output Current:600mA; Supply Voltage Min:10V; Supply Voltage Max:20V; Driver Case Style:DIP; No. of Pins:8Pins; Input Delay:150ns; Output Delay:150ns; Operating Temperature Min:-40°C; Operating Temperature Max:125°C; Packaging:Each; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Base Number:21281; Device Type:IGBT MOSFET; Module Configuration:High or Low Side; Operating Temperature Range:-40°C to +125°C; Supply Voltage Range:10V to 20V

Power MOSFET and IGBT Driver, Single Channel/Hi Side, 600V, 8-pin SOIC, Tube

MOSFET DRVR 600V 0.6A 1-OUT Hi Side Non-Inv 16-Pin SOIC N Tube