THYRISTOR MODULE, 90A; Gate Trigger Current Max, Igt:120mA; Current It av:90A; On State RMS Current IT(rms):141A; Gate Trigger Voltage Max Vgt:2.5V; MSL:-; SVHC:No SVHC (27-Jun-2018); Approval Bodies:UL; Case Temperature Tc:70°C; Current Itsm:1780A; Current Temperature:70°C; External Depth:41mm; External Length / Height:32mm; External Width:27mm; Fixing Centres:30mm; Fixing Hole Diameter:3.9mm; Igt Temperature:25°C; Isolation Voltage:3500V; Itsm Frequency:50Hz; Junction Temperature Tj Max:125°C; Junction Temperature Tj Min:-40°C; Junction to Case Thermal Resistance A:0.38°C/W; Output Current:141A; Rate of Current Change di / dt:200A/s; Rate of Voltage Change dv / dt:500V/s; Repetitive Reverse Voltage Vrrm Max:1200V; Temperature Vgt:25°C; Thyristor Type:Thyristor; Weight:54g

THYRISTOR, 16A 600V TO-48; Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:60mA; Current It av:16A; On State RMS Current IT(rms):35A; Gate Trigger Voltage Max Vgt:2V; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Itsm:285A; Repetitive Reverse Voltage Vrrm Max:600V; Thread Size:10-32UNF; Thyristor Type:Thyristor

THYRISTOR, 22A 100V TO-48; Peak Repetitive Off-State Voltage, Vdrm:100V; Gate Trigger Current Max, Igt:60mA; Current It av:22A; On State RMS Current IT(rms):35A; Gate Trigger Voltage Max Vgt:2V; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Itsm:335A; Repetitive Reverse Voltage Vrrm Max:100V; Thread Size:10-32UNF; Thyristor Type:Thyristor

THYRISTOR, 22A 1200V TO-48; Peak Repetitive Off-State Voltage, Vdrm:1.2kV; Gate Trigger Current Max, Igt:60mA; Current It av:22A; On State RMS Current IT(rms):35A; Gate Trigger Voltage Max Vgt:2V; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Itsm:335A; Repetitive Reverse Voltage Vrrm Max:1200V; Thread Size:10-32UNF; Thyristor Type:Thyristor

IGBT, TO-247; DC Collector Current:45A; Collector Emitter Saturation Voltage Vce(on):2.77V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Ic Continuous a Max:45A; Current Temperature:25°C; Device Marking:IRG4PH50KPBF.; Fall Time Max:280ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Power Dissipation Max:200W; Pulsed Current Icm:90A; Rise Time:29ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:1.2kV

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:9.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Pulse Current Idm:77A; SMD Marking:F7491

MOSFET, N, 100V, 27A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:63W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:520mJ; Current Iar:29A; Current Id Max:31A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:2.4°C/W; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:190A; Rate of Voltage Change dv / dt:5V/ns; Repetitive Avalanche Energy Max:6.3mJ; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

MOSFET, N, 100V, 9.6A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:44W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Id Max:9.6A; Junction to Case Thermal Resistance A:3.4°C/W; On State resistance @ Vgs = 10V:165ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:37A; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

MOSFET, N, 55V, 174A, SUPER 220; Transistor Polarity:N Channel; Continuous Drain Current Id:174A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-273AA; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:5ohm; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Pulse Current Idm:680A; Voltage Vds Typ:55V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

MOSFET, N, 100V, 38A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:110W; Transistor Case Style:TO-251AA; No. of Pins:4Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:I-PAK; Junction to Case Thermal Resistance A:1.4°C/W; On State resistance @ Vgs = 10V:29ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:150A; Turn Off Time:13ns; Turn On Time:23ns; Voltage Vds Typ:80V; Voltage Vgs Rds on Measurement:10V

MOSFET, N, 55V, 58A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:63W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Id Max:58A; Junction to Case Thermal Resistance A:2.4°C/W; On State resistance @ Vgs = 10V:8ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:360A; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

MOSFET, N SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:360mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:360mW; Pulse Current Idm:680mA; SMD Marking:SAs; Tape Width:8mm; Termination Type:Surface Mount Device; Voltage Vgs th Max:2V

Linear Voltage Regulator IC Positive Fixed 1 Output 150mA PG-SOT223-4

SLC NAND Flash Parallel 3V/3.3V 4Gbit 512M x 8bit 48-Pin TSOP-I Tray

NOR Flash 256Mbit 32M X 8Bit 3V 24-Pin FBGA Tray

NOR Flash Parallel 3V 64Mbit 8M/4M x 8bit/16bit 90ns 56-Pin TSOP T/R

MOSFET, N TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:136W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Id Max:23A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:92A; Voltage Vds Typ:150V; Voltage Vgs th Max:5.5V

MOSFET, DUAL NN LOGIC SO-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:50V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:3A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:10A; SMD Marking:F7103; Termination Type:Surface Mount Device; Voltage Vds:50V

MOSFET, N TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:200W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Id Max:57A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:180A; Voltage Vds:100V