IRS2186 Series 600 V 4 A 20 V Supply Dual High And Low Side Driver - SOIC-8

ITS4200SMEO Series 45 V 700 mA Smart High-Side NMOS-Power Switch - SOT-223-4

LDO Linear Voltage Regulator Pos 3.3V 0.4A 3-Pin TO-252 T/R

TLD1120EL Series 40 V 360 mA 1 Channel High Side Current Source - PG-SSOP-14

LDO Regulator Pos 5V 0.45A 14-Pin SSOP EP T/R

IGBT PRODUCTS;

INDUSTRY

IR21531S - Gate Driver

MOSFET DUAL NN MICRO-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):135mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; No. of Pins:8Pins ;RoHS Compliant: Yes

MOSFET Transistor N Channel 14.5 A 30 V 0.007 ohm 4.5 V 1 V ;RoHS Compliant: Yes

Trans MOSFET N-CH 100V 5.4A 8-Pin SOIC

Trans MOSFET P-CH 100V 14A 3-Pin(2+Tab) D2PAK

MOSFET P LOGIC SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Drain Source Voltage Vds:-14V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017); Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:86A; SMD Marking:F7220; Voltage Vds Typ:-14V; Voltage Vgs Max:-600mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Min:-0.6V

Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB

MOSFET N DIRECTFET ST; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.1W; Transistor Case Style:DirectFET ST; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:2560pF; Charge Qrr @ Tj = 25°C Typ:5.5nC; Current Id Max:12.7A; Current Temperature:25°C; External Depth:4.85mm; External Length / Height:0.7mm; External Width:3.95mm; Full Power Rating Temperature:25°C; IC Package (Case style):ST; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; No. of Transistors:1; On State Resistance Max:8.3mohm; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C; Packaging:Cut Tape; Pulse Current Idm:102A; Reverse Recovery Time trr Typ:15ns; SMD Marking:6614; Voltage Vds:40V

MOSFET N 20V 77A TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:77A; Drain Source Voltage Vds:20V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:88W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Id Max:77A; Junction to Case Thermal Resistance A:1.7°C/W; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:280A; Termination Type:Through Hole; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

Single N-Channel 800 V 360 mOhm 30 nC CoolMOS? Power Mosfet - DPAK

IPD80R3 - 800V CoolMOS N-Channel Power MOSFET

LOW POWER_NEW

FF11MR12W1M1_B11 1200 V 100A EasyDUAL Module with CoolSiC? Mosfet / PressFIT/NTC