MOSFET, P TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-; Power Dissipation Pd:110W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Id Max:-31A; Current Temperature:25°C; Device Marking:IRF5305; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Pulse Current Idm:110A

MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg

PXE1610CDN - Digital Dual Output 6+1 VR12.5 & VR13 CPU Controller

MOSFET 55V, 98A, 8mOhm Automotive MOSFET

RF Amplifier IC LTE 700MHz ~ 2.7GHz TSLP-12-4

Infineon N-Channel MOSFET, 13.8 A, 600 V, 3-Pin TO-247 IPW60R280E6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 280 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 104 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V