Thermally-Enhanced High Power RF LDMOS FETs340 W, 30 V, 1930 1990 MHz

Wideband RF LDMOS Integrated Power Amplifier 40 W,28 V, 1800 2100 MHz

Wideband RF LDMOS Integrated Power Amplifi er15 W, 28 V, 1800 2200 MHz

Thermally-Enhanced High Power RF LDMOS FET70 W, 2110 2170 MHz

Thermally-Enhanced High Power RF LDMOS FET180 W, 2110 2170 MHz

Thermally-Enhanced High Power RF LDMOS FETs200 W, 2110 2170 MHz

Thermally-Enhanced High Power RF LDMOS FETs200 W, 2110 2170 MHz

Thermally-Enhanced High Power RF LDMOS FET80 W, 28 V, 2110 2170 MHz

High Power RF LDMOS Field Effect Transistor300 W, 2110 2170 MHz

Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 2200 MHz

High Power RF LDMOS Field Effect Transistor140 W, 2300 2400 MHz

Thermally-Enhanced High Power RF LDMOS FET1000 W, 50 V, 1030 / 1090 MHz

TRANSMITTER, RF, W/ 8051, 38TSSOP; Frequency Min:300MHz; Frequency Max:928MHz; RF / IF Modulation:ASK, FSK; Data Rate:32Kbps; Transmitting Current:-; RF IC Case Style:TSSOP; No. of Pins:38Pins; Supply Voltage Min:1.9V; Supply Voltage Max:3.6V; Output Power (dBm):10dBm; Sensitivity dBm:-; RF Transmitter Applications:Active Tagging, Automatic Meter Reading, Remote Control Systems, Security Alarm Systems; Operating Temperature Min:-40C; Operating Temperature Max:85C; Product Range:-; RoHS Phthalates Compliant:To Be Advised; MSL:-; SVHC:No SVHC (27-Jun-2018); Frequency Band:315MHz, 434MHz, 868MHz, 915MHz; Frequency Range:300MHz to 320MHz, 433MHz to 450MHz, 865MHz to 870MHz, 902MHz to 928MHz; Modulation Type:ASK, FSK; Operating Temperature Range:-40C to +85C; Supply Voltage Range:1.9V to 3.6V; Termination Type:Surface Mount Device

Smart Low Energy Wireless Systems with a Microcontroller Unit

ASK/FSK 915 MHz Wireless Transceiver

TDA7225 - ASK/FSK 434MHz Wireless Transceicer

IGBT Chip in NPT-technology

IGBT Chip in NPT-technology

IGBT4 Medium Power Chip

IGBT3 Chip