Single N-Channel 150 V 11 mOhm 97 nC HEXFET? Power Mosfet - DirectFET?

Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET? Power Mosfet - TO-262-3

Trans MOSFET N-CH 55V 53A 3-Pin(3+Tab) TO-262

Trans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK T/R

AUIRGP4066D Series 600 V 140 A N-Channel IGBT Flange Mount - TO-247AD

Trans IGBT Chip N-CH 600V 240A 3-Pin(3+Tab) Super-247

Power Switch Hi Side 2.3A 5-Pin(4+Tab) D2PAK T/R

IR25750LPBF - 600 V Surface Mount Novel Current Sensing IC - SOT-23-5

Synchronous Buck Regulator 16-Pin MLPQ EP T/R

Integrated Power Module IC, 3-Phase, Open Emitter, 600V, 30A, 19-Pin SIP-2

MOSFET DRVR 600V 0.35A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin SOIC Tube

IR2103 - Gate Driver

MOSFET P -100V -40A TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Id Max:-40A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Operating Temperature Min:-55°C; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK

Trans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220AB

Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC

IRG4PSC71U Series 600 V 85 A Through Hole N-Channel UltraFast IGBT - TO-274AA

Trans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB

MOSFET N 40V 104A D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2.4W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017); Alternate Case Style:D2-PAK; Current Id Max:104A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Power Dissipation on 1" Sq. PCB:167W; Pulse Current Idm:416A; SMD Marking:L1104S; Termination Type:Surface Mount Device; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V

MOSFET N 30V 34A TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:30V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:56W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Id Max:38A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.7°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Operating Temperature Min:-55°C; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V