IGBT N 1200V 40A TO-247; DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):2.3V; Power Dissipation Pd:270W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Ic Continuous a Max:40A; No. of Transistors:1; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C; Power Dissipation Max:270W; Termination Type:Through Hole; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:1.2kV

MOSFET N 600V TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.26ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:29.7W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Id Max:3.2A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:9.6A; Termination Type:Through Hole; Voltage Vds:600V; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

MCU 16BIT C166 33MHZ MQFP-144; No. of Bits:16bit; CPU Speed:33MHz; Program Memory Size:-; RAM Memory Size:2KB; No. of Pins:144Pins; MCU Case Style:MQFP; No. of I/O's:111I/O's; Embedded Interface Type:CAN SPI USART; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Packaging:Each; Product Range:C166 Microcontrollers; MSL:MSL 3 - 168 hours; SVHC:No SVHC (12-Jan-2017); Controller Family/Series:C166; Logic Function Number:C167; MPU Core Size:16bit; No. of ADC Inputs:16; No. of PWM Channels:4; No. of Timers:9; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +125°C; Oscillator Type:External Internal; Peripherals:ADC; Serial Comms:1xUSART 1xSSC CAN2.0B; Supply Voltage Range:4.5V to 5.5V; Termination Type:Surface Mount Device

MCU 8-Bit C500 CPU 20MHz 32kB ROM 1kB RAM -40~+125°C 44-Pin MQFP

Trans MOSFET N-CH 30V 260A 3-Pin(2+Tab) D2PAK T/R

IGBT MODULE 1200V ECONOPACK3; Transistor Polarity:N Channel; DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):3.2V; Power Dissipation Pd:80W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:EconoPACK; No. of Pins:17Pins; Operating Temperature Max:125°C; Product Range:-; SVHC:No SVHC (12-Jan-2017); Current Ic Continuous a Max:15A; Current Temperature:80°C; Full Power Rating Temperature:25°C; Module Configuration:Six; No. of Transistors:6; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +125°C; Power Dissipation Max:80W; Pulsed Current Icm:30A; Termination Type:Solder; Voltage Vce Sat Typ:2.7V; Voltage Vces:1.2kV

Trans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm

IRS2104 - Gate Driver

Single N-Channel 100 V 15 mOhm 120 nC HEXFET? Power Mosfet - D2PAK

Trans MOSFET N-CH 100V 63A 3-Pin(3+Tab) IPAK

Trans MOSFET N-CH 60V 8A 8-Pin SO

Trans MOSFET N-CH 600V 30A 3-Pin TO-220FP Tube

DC-DC CONVERTER 1.5 MHz QFN-17; Topology:Synchronous Buck (Step Down); Input Voltage Min:1.5V; Input Voltage Max:16V; No. of Outputs:1Outputs; DC / DC Converter IC Case:QFN; No. of Pins:17Pins; Output Current:14A

Single N-Channel 30 V 6 mOhm 15 nC HEXFET? Power Mosfet - PQFN 3.3 x 3.3 mm

N CHANNEL MOSFET 250V 32A PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.084ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:20V ;RoHS Compliant: Yes

MOSFET P CH DIODE 30V 9.8A SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):13.6mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.9V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017); Current Id Max:-9.8A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:-20V

IGBT N CH 1200V 33A TO-247AC; DC Collector Current:33A; Collector Emitter Saturation Voltage Vce(on):2.05V; Power Dissipation Pd:210W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Power Dissipation Max:210W; Transistor Type:IGBT

IRG7PH35 - Discrete IGBT with Anti-Parallel Diode

IRG7PH46 - Discrete IGBT without Anti-Parallel Diode

IRFH9310 Series 30 V 21 A 4.6 mOhm 3.1 W 110 nC P-Channel MOSFET - PQFN-8