Description

MOSFET N 600V 2A; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):4.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:44W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Id Max:1.9mA; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:600V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V