Rectifier Diodes: IF(AV): 1105

Rectifier Diodes: IF(AV): 710

Rectifier Diodes: IF(AV): 5150

Fast Recovery Diode Modules: FRD 4500 V; Config: Dual diode; IF(A per arm): 400

Fast Recovery Diode Modules: FRD 3300 V; Config: Series diode pair; IF(A per arm): 200

Fast Recovery Diode Modules: FRD 3300 V; Config: Dual diode; IF(A per arm): 1200

Fast Recovery Diode Modules: FRD 1200 V; Config: Triple diode; IF(A per arm): 1200

Fast Recovery Diode Modules: FRD 1200 V; Config: Dual diode; IF(A per arm): 900

Fast Recovery Diode Modules: FRD 1200 V; Config: Triple diode; IF(A per arm): 1200

Gate Turn-off Thyristors (GTOs): VDRM(V): 4500; ITCM(A): 1000

Gate Turn-off Thyristors (GTOs): VDRM(V): 4500; ITCM(A): 3000

Gate Turn-off Thyristors (GTOs): VDRM(V): 1800; ITCM(A): 700

Pulsed Power Thyristors (PPTs): VDRM(V): 4500; IT(AV): 1000

THYRISTOR, 724A 1000V; Peak Repetitive Off-State Voltage, Vdrm:1kV; Gate Trigger Current Max, Igt:150mA; Current It av:724A; On State RMS Current IT(rms):1.14kA; Thyristor Case Style:-; No. of Pins:3Pins; Peak Non Rep Surge Current Itsm 50Hz:9.8kA; Holding Current Max Ih:70mA; Gate Trigger Voltage Max Vgt:3V; Operating Temperature Max:-; MSL:-; Current Itsm:9800A; External Diameter:42mm; External Length / Height:15mm; Rate of Current Change di / dt:700A/µs; Rate of Voltage Change dv / dt:1000V/µs; Repetitive Reverse Voltage Vrrm Max:1000V; Thyristor Type:Thyristor

IGBT 4500 V; Configuration: Single; Isolation Voltage: 10.2 kV

IGBT 4500 V; Configuration: Chopper; Isolation Voltage: 10.2 kV

IGBT 4500 V; Configuration: Dual; Isolation Voltage: 6 kV

IGBT 4500 V; Configuration: Chopper; Isolation Voltage: 6 kV

IGBT 4500 V; Configuration: Single; Isolation Voltage: 6 kV

IGBT 4500 V; Configuration: Single; Isolation Voltage: 10.2 kV