Rectifier Diodes: IF(AV): 990

Rectifier Diodes: IF(AV): 1100

Rectifier Diodes: IF(AV): 2030

Rectifier Diodes: IF(AV): 3430

Rectifier Diodes: IF(AV): 960

Rectifier Diodes: IF(AV): 2050

Rectifier Diodes: IF(AV): 3920

Rectifier Diodes: IF(AV): 4950

Rectifier Diodes: IF(AV): 4690

Fast Recovery Diodes: VRRM(V): 2500 IT(AV): 1490

Fast Recovery Diode Modules: FRD 4500 V; Config: Dual diode; IF(A per arm): 400

Fast Recovery Diode Modules: FRD 3300 V; Config: triple diode; IF(A per arm): 1000

Fast Recovery Diode Modules: FRD 3300 V; Config: Dual diode; IF(A per arm): 1200

Fast Recovery Diode Modules: FRD 3300 V; Config: Dual diode; IF(A per arm): 800

Fast Recovery Diode Modules: FRD 1800 V; Config: Dual diode; IF(A per arm): 1200

Fast Recovery Diode Modules: FRD 1200 V; Config: Dual diode; IF(A per arm): 600

Gate Turn-off Thyristors (GTOs): VDRM(V): 2500; ITCM(A): 2500

Pulsed Power Thyristors (PPTs): VDRM(V): 4500; IT(AV): 760

IGBT, CHOPPER 200A 1200V; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:1.39kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:5Pins; MSL:-; Current Ic @ Vce Sat:200A; Current Ic Continuous a Max:200A; Current Temperature:80°C; Fall Time tf:70ns; Full Power Rating Temperature:25°C; No. of Transistors:2; Pulsed Current Icm:400A; Rise Time:110ns; Transistor Polarity:N Channel; Transistor Type:IGBT Module; Voltage Vces:1.2kV

IGBT, CHOPPER 200A 1200V; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:1.39kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:5Pins; MSL:-; Current Ic @ Vce Sat:200A; Current Ic Continuous a Max:200A; Current Temperature:80°C; Fall Time tf:50ns; Full Power Rating Temperature:25°C; No. of Transistors:2; Pulsed Current Icm:400A; Rise Time:95ns; Transistor Polarity:N Channel; Transistor Type:IGBT Module; Voltage Vces:1.2kV