SIC MOSFET, N-CH, 650V, 150A, TO-247-4;

IGBT, SINGLE, 600V, 60A, TO-247-3;

MOSFET, N-CH, 65V, 90A, TO-220AB-3;

MOSFET, N-CH, 60V, 50A, TO-220AB-3;

LINEAR VOLT REG, 5V, 0.1A, SOIC-8;

LDO, FIXED, 3.3V, 0.3A, SOT-23-5;

LDO, ADJ, 1.25V TO 13.65V, 1A, SOT-223-4;

LINEAR VOLT REG, 3.3V, 0.1A, SOIC-8;

LINEAR VOLT REG, 12V, 0.1A, SOT-89-3;

LINEAR VOLT REG, 5V, 0.15A, SOT-89-3;

ZENER DIODE, 0.3W, 5.1V, SOT-23;

MOSFET, P-CHANNEL, 60V, 20A, QFN;

MOSFET, N-CHANNEL, 65V, 25A, QFN;

MOSFET, N-CHANNEL, 30V, 40A, QFN;

MOSFET, N-CHANNEL, 40V, 50A, QFN;

MOSFET, N-CHANNEL, 65V, 105A, QFN;

MOSFET, DUAL N-CH, 60V, 5A, SOIC;

MOSFET, DUAL N-CH, 40V, 48A, QFN;

  DIODE SIL CARB 6500V 12A TO220AC The SIT10C065 and SIT12C065 by Diotec Semiconductor are two neighboring members of the 650 V single-diode family in TO-220AC. They offer 10 A and 12 A of average forward current, respectively. Both are ideally suited for high-voltage/high-frequency switching circuits, such as power factor correction (PFC), highly efficient solar inverters, or data server power supplies. Both devices feature a high reverse voltage of 650 V combined with an extremely low reverse recovery, also known as better discharging time Features High reverse voltage Almost zero switching losses Low reverse leakage current High-efficiency high-frequency switching Single diodes in industry standard case outline Specifications 10 A and 12 A average forward current (IFAV) 650 V repetitive reverse voltage (VRRM) Typical forward voltage (VF 1.7 V at 10 A and +175°C (SIT10C065) and 1.75 V at 12 A and +175°C (SIT12C065) Typical reverse leakage 20 µA at 650 V and +175°C (IR) Total capacitive charge 28 nC at 400 V, 10 A, 200 A/µs (QC) TO-220AC case outline    

18.2V Clamp 275A Ipp Tvs Diode Through Hole P-600