Description

TRANSISTOR, DUAL NPN MLP-832; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):270mV; Continuous Collector Current Ic Max:4.5A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:4.5A; Current Ic hFE:200mA; Device Marking:DBB; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:140MHz; Hfe Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Power Dissipation Ptot Max:1.5W; Pulsed Current Icm:12A; SMD Marking:DBB; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar; Voltage Vcbo:40V