MOSFETs MOSFET BVDSS: 31V-40V PowerDI3333-8/SWP T&R 3K

MOSFETs MOSFET BVDSS: 31V-40V PowerDI3333-8/SWP T&R 3K

MOSFETs MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K

Diodes - General Purpose, Power, Switching 500mW 75V

TRANSISTOR, NPN E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:130MHz; Power Dissipation Pd:1.2W; DC Collector Current:4A; DC Current Gain hFE:100hFE; Transistor Case Style:E-Line; No. of Pins:3Pins; Operating Temperature Max:200°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):200mV; Continuous Collector Current Ic Max:4A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:4A; Current Ic hFE:2A; Device Marking:ZTX853; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:130MHz; Hfe Min:100; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +200°C; Power Dissipation Ptot Max:1.2W; Pulsed Current Icm:10A; Transistor Type:Power Bipolar; Voltage Vcbo:200V

LSC SCHOTTKY RECTIFIER

TRANSISTOR, PNP, MLP-322; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:190MHz; Power Dissipation Pd:1.5W; DC Collector Current:-3A; DC Current Gain hFE:300hFE; Transistor Case Style:MLP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):370mV; Continuous Collector Current Ic Max:3A; Current Ic @ Vce Sat:2.5A; Current Ic Continuous a Max:3A; Current Ic hFE:100mA; Device Marking:S3; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:1.5W; Pulsed Current Icm:4A; SMD Marking:S3; Transistor Type:Power Bipolar; Voltage Vcbo:50V

TRANSISTOR, DUAL NPN MLP-832; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):270mV; Continuous Collector Current Ic Max:4.5A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:4.5A; Current Ic hFE:200mA; Device Marking:DBB; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:140MHz; Hfe Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Power Dissipation Ptot Max:1.5W; Pulsed Current Icm:12A; SMD Marking:DBB; Transistor Type:Power Bipolar; Voltage Vcbo:40V

SECURITY SIREN DRIVE, SOIC8, 100; IC Package Type:SOIC; No. of Pins:8Pins; Operating Temperature Min:-40°C; Operating Temperature Max:125°C; MSL:-; SVHC:No SVHC (15-Jan-2018); Base Number:100; IC Generic Number:100; Logic Function Number:100; Operating Temperature Range:-40°C to +125°C; Termination Type:Surface Mount Device

MOSFET, N SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:150mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:330mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:330mW; Pulse Current Idm:3A; SMD Marking:MC; Tape Width:8mm; Termination Type:Surface Mount Device; Voltage Vgs th Max:2.4V

MOSFET, P SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:480mA; Drain Source Voltage Vds:-240V; On Resistance Rds(on):11ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOT-223; No. of Pins:4Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (15-Jan-2018); Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:2.5W; Pulse Current Idm:1A; SMD Marking:ZVN4424G; Tape Width:12mm; Termination Type:Surface Mount Device; Voltage Vgs th Max:-2V

TRANSISTOR, DUAL NPN MLP-832; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):270mV; Continuous Collector Current Ic Max:4.5A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:4.5A; Current Ic hFE:200mA; Device Marking:DBB; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:140MHz; Hfe Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Power Dissipation Ptot Max:1.5W; Pulsed Current Icm:12A; SMD Marking:DBB; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar; Voltage Vcbo:40V

TRANSISTOR, DUAL NPN MLP-832; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):320mV; Continuous Collector Current Ic Max:4A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:4A; Current Ic hFE:200mA; Device Marking:DCC; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:165MHz; Hfe Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Power Dissipation Ptot Max:1.5W; Pulsed Current Icm:6A; SMD Marking:DCC; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar; Voltage Vcbo:100V

TRANSISTOR, DUAL NPN/PNP MLP-832; Transistor Polarity:NPN, PNP; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Ic Hfe NPN Device:200mA; Current Ic Hfe PNP Device:-100mA; Current Ic NPN Device:4.5A; Current Ic PNP Device:-3.5A; Device Marking:DBB; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:165MHz; Hfe NPN Device @ IC Min:300; Hfe PNP Device @ IC Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Power Dissipation Ptot Max:1.5W; SMD Marking:DB2; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar; Voltage Vcbo:40V; Voltage Vce Sat @ Ic NPN Max:0.27V; Voltage Vce Sat @ Ic PNP Max:-0.3V; Voltage Vceo NPN:20V; Voltage Vceo PNP:-20V

TRANSISTOR, DUAL NPN/PNP MLP-832; Transistor Polarity:NPN, PNP; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Ic Hfe NPN Device:200mA; Current Ic Hfe PNP Device:-100mA; Current Ic NPN Device:4A; Current Ic PNP Device:-3A; Device Marking:DC3; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:165MHz; Hfe NPN Device @ IC Min:300; Hfe PNP Device @ IC Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Power Dissipation Ptot Max:1.5W; SMD Marking:DC3; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar; Voltage Vce Sat @ Ic NPN Max:0.32V; Voltage Vce Sat @ Ic PNP Max:-0.37V; Voltage Vceo NPN:50V; Voltage Vceo PNP:-40V

CRYSTAL CERAMIC SEAM

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