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TRANSISTOR, DUAL NPN MLP-832; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):270mV; Continuous Collector Current Ic Max:4.5A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:4.5A; Current Ic hFE:200mA; Device Marking:DBB; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:140MHz; Hfe Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Power Dissipation Ptot Max:1.5W; Pulsed Current Icm:12A; SMD Marking:DBB; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar; Voltage Vcbo:40V

TRANSISTOR, DUAL NPN MLP-832; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):320mV; Continuous Collector Current Ic Max:4A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:4A; Current Ic hFE:200mA; Device Marking:DCC; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:165MHz; Hfe Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Power Dissipation Ptot Max:1.5W; Pulsed Current Icm:6A; SMD Marking:DCC; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar; Voltage Vcbo:100V

TRANSISTOR, DUAL NPN/PNP MLP-832; Transistor Polarity:NPN, PNP; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Ic Hfe NPN Device:200mA; Current Ic Hfe PNP Device:-100mA; Current Ic NPN Device:4.5A; Current Ic PNP Device:-3.5A; Device Marking:DBB; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:165MHz; Hfe NPN Device @ IC Min:300; Hfe PNP Device @ IC Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Power Dissipation Ptot Max:1.5W; SMD Marking:DB2; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar; Voltage Vcbo:40V; Voltage Vce Sat @ Ic NPN Max:0.27V; Voltage Vce Sat @ Ic PNP Max:-0.3V; Voltage Vceo NPN:20V; Voltage Vceo PNP:-20V

TRANSISTOR, DUAL NPN/PNP MLP-832; Transistor Polarity:NPN, PNP; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Ic Hfe NPN Device:200mA; Current Ic Hfe PNP Device:-100mA; Current Ic NPN Device:4A; Current Ic PNP Device:-3A; Device Marking:DC3; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:165MHz; Hfe NPN Device @ IC Min:300; Hfe PNP Device @ IC Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Power Dissipation Ptot Max:1.5W; SMD Marking:DC3; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar; Voltage Vce Sat @ Ic NPN Max:0.32V; Voltage Vce Sat @ Ic PNP Max:-0.37V; Voltage Vceo NPN:50V; Voltage Vceo PNP:-40V

CRYSTAL CERAMIC SEAM

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