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TRANSISTOR, NPN MLP-322; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):320mV; Continuous Collector Current Ic Max:4A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:4A; Current Ic hFE:200mA; Device Marking:SC; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:165MHz; Hfe Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Power Dissipation Ptot Max:1.5W; Pulsed Current Icm:6A; SMD Marking:SC; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar; Voltage Vcbo:100V

MOSFET, P E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:230mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-; Power Dissipation Pd:700mW; Transistor Case Style:E-Line; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:700mW; Pulse Current Idm:3A

TRANSISTOR, DUAL NPN/PNP MLP-832; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:20V; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Continuous Collector Current Ic Max:4.5A; Current Ic Hfe NPN Device:200mA; Current Ic Hfe PNP Device:-100mA; Current Ic NPN Device:4.5A; Current Ic PNP Device:-3.5A; Device Marking:DBB; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:165MHz; Hfe Min:300; Hfe NPN Device @ IC Min:300; Hfe PNP Device @ IC Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Power Dissipation Ptot Max:1.5W; SMD Marking:DB2; Transistor Type:Power Bipolar; Voltage Vcbo:40V; Voltage Vce Sat @ Ic NPN Max:0.27V; Voltage Vce Sat @ Ic PNP Max:-0.3V; Voltage Vceo NPN:20V; Voltage Vceo PNP:-20V

TRANSISTOR, DUAL NPN/PNP MLP-832; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Continuous Collector Current Ic Max:4A; Current Ic Hfe NPN Device:200mA; Current Ic Hfe PNP Device:-100mA; Current Ic NPN Device:4A; Current Ic PNP Device:-3A; Device Marking:DC3; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:165MHz; Hfe Min:300; Hfe NPN Device @ IC Min:300; Hfe PNP Device @ IC Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Power Dissipation Ptot Max:1.5W; SMD Marking:DC3; Transistor Type:Power Bipolar; Voltage Vcbo:100V; Voltage Vce Sat @ Ic NPN Max:0.32V; Voltage Vce Sat @ Ic PNP Max:-0.37V; Voltage Vceo NPN:50V; Voltage Vceo PNP:-40V

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MOSFET, N SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:330mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:330mW; Pulse Current Idm:3A; SMD Marking:MZ; Tape Width:8mm; Termination Type:Surface Mount Device; Voltage Vgs th Max:3V

TRANSISTOR, NPN SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:-; Power Dissipation Pd:330mW; DC Collector Current:200mA; DC Current Gain hFE:25hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:50MHz; Hfe Min:40; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:350mW; SMD Marking:3E; Tape Width:8mm; Termination Type:Surface Mount Device; Transistor Type:General Purpose; Voltage Vcbo:300V