Diode Array 1 Pair Series Connection Standard 85V 125mA (DC) Surface Mount SOT-523

LSC SCHOTTKY RECTIFIER

LSC SCHOTTKY RECTIFIER

LSC ITO-220-AC SFGPP 8A 600V 90*90

LSC SUPER(ULTRA) FAST & FAST RECOVERY RE

LSC BRIDGE RECTIFIER

LSC SCHOTTKY RECTIFIER

LSC BRIDGE RECTIFIER

LSC ZENER DIODE

LSC SMD DO-219 RGPP 1A

LSC BRIDGE RECTIFIERS

LSC BRIDGE RECTIFIER

Zener Diode 5.6V 200mW ±5% Surface Mount SOD-323

Buffer, ReDriver 1 Channel 400kHz 8-TDFN (2x3)

Power Switch/Driver 1:2 P-Channel 1.5A 8-SOP

Diode Standard 50V 1A Surface Mount SMA

TRANSISTOR, DUAL PNP MLP-832; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:20V; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:3.5A; Current Ic @ Vce Sat:3.5A; Current Ic Continuous a Max:3.5A; Current Ic Hfe PNP Device:-10mA; Current Ic NPN Device:3.5A; Current Ic PNP Device:-3.5A; Current Ic hFE:100mA; Device Marking:D22; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:180MHz; Hfe Min:300; Hfe NPN Device @ IC Min:300; Hfe PNP Device @ IC Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Power Dissipation Ptot Max:1.5W; Pulsed Current Icm:6A; SMD Marking:D22; Transistor Type:Power Bipolar; Voltage Vcbo:25V

TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:120MHz; Power Dissipation Pd:1W; DC Collector Current:3A; DC Current Gain hFE:50hFE; Transistor Case Style:E-Line; No. of Pins:3Pins; Operating Temperature Max:200°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:3A; Current Ic @ Vce Sat:3A; Current Ic Continuous a Max:3A; Current Ic hFE:500mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:120MHz; Hfe Min:300; No. of Transistors:1; Power Dissipation Ptot Max:1W; Pulsed Current Icm:6A; Voltage Vcbo:200V

TRANSISTOR, NPN MLP-322; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):270mV; Continuous Collector Current Ic Max:4.5A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:4.5A; Current Ic hFE:200mA; Device Marking:SB; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:140MHz; Hfe Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Power Dissipation Ptot Max:1.5W; Pulsed Current Icm:12A; SMD Marking:SB; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar; Voltage Vcbo:40V