NE97733
Part Number : NE97733
California Eastern Laboratories (CEL)PNP Silicon High Frequency Transistor, 8.5 GHz TYP
UPA800T
Part Number : UPA800T
California Eastern Laboratories (CEL)NPN Silicon High Frequency Transistor, Low Noise Figure: NF = 1.9 dB TYP at 2 GHz
UPA806T
Part Number : UPA806T
California Eastern Laboratories (CEL)NPN Silicon High Frequency Transistor, Low Noise Figure: NF = 1.5 dB TYP at 2 GHz
UPA812T
Part Number : UPA812T
California Eastern Laboratories (CEL)NPN Silicon High Frequency Transistor, Low Noise Figure: NF = 1.4 dB TYP at 1 GHz
NE5531079A
Part Number : NE5531079A
California Eastern Laboratories (CEL)7.5 V Operation Silicon RF Power LDMOS FET For Uhf-BAnd 10 W Transmission Amplifiers, High Linear Gain : GL = 20.5 Db TYP
NE55410GR
Part Number : NE55410GR
California Eastern Laboratories (CEL)N-Channel Silicon Power LDMOS FET For 2 W + 10 W Vhf To L-BAnd Single-End Power Amplifier
NE5550279A
Part Number : NE5550279A
California Eastern Laboratories (CEL)Silicon Power LDMOS FET, High Linear gain : GL = 22.5 dB TYP.
NX6351GP31-AZ
Part Number : NX6351GP31-AZ
California Eastern Laboratories (CEL)1 310 nm AlGaInAs MQW-DFB Laser Diode For 9.8 Gb/s CPRI And 10G E-PON ONU Application
NX6352GP33-AZ
Part Number : NX6352GP33-AZ
California Eastern Laboratories (CEL)1 330 nm AlGaInAs MQW-DFB Laser Diode For 9.8 Gb/s CPRI And 10G E-PON ONU Application
NX6352GP35-AZ
Part Number : NX6352GP35-AZ
California Eastern Laboratories (CEL)1 350 nm AlGaInAs MQW-DFB Laser Diode For 9.8 Gb/s CPRI And 10G E-PON ONU Application
NX6353EP27-AZ
Part Number : NX6353EP27-AZ
California Eastern Laboratories (CEL)1 270 nm AlGaInAs MQW-DFB Laser Diode For 9.8Gbps CPRI, 10G Ethernet Application
NX6353EP31-AZ
Part Number : NX6353EP31-AZ
California Eastern Laboratories (CEL)1 310 nm AlGaInAs MQW-DFB Laser Diode For 9.8Gbps CPRI, 10G Ethernet Application
NX8510UD53
Part Number : NX8510UD53
California Eastern Laboratories (CEL)1 530 nm For CWDM 2.5 Gb/s InGaAsP MQW-DFB Laser Diode TOSA, TC = 0 to +70C
NX8510UD59
Part Number : NX8510UD59
California Eastern Laboratories (CEL)1 590 nm For CWDM 2.5 Gb/s InGaAsP MQW-DFB Laser Diode TOSA, TC = 0 to +70C
NX8517XC51
Part Number : NX8517XC51
California Eastern Laboratories (CEL)1 510 nm For CWDM 2.5 Gb/s InGaAsP MQW-DFB Laser Diode TOSA, TC = -20 to +85C
NX8663JB-BC
Part Number : NX8663JB-BC
California Eastern Laboratories (CEL)1 650nm InGaAsP MQW-DFB DC-PBH PULSED Laser Diode Module For OTDR Application
NR4211TH
Part Number : NR4211TH
California Eastern Laboratories (CEL)InAlAs APD Receiver With Internal Pre-Amplifier For 10 Gb/s ApplicationS
NV4V31MF
Part Number : NV4V31MF
California Eastern Laboratories (CEL)Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source, 3.8 mm small CAN package
NV4V41SF
Part Number : NV4V41SF
California Eastern Laboratories (CEL)Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source, Light source For Laser Direct Imaging system
PH5502B2NA1-E4
Part Number : PH5502B2NA1-E4
California Eastern Laboratories (CEL)Ambient Illuminance Sensor ,Large output light current 230 A TYP
