NE3516S02
Part Number : NE3516S02
California Eastern Laboratories (CEL)N-Channel GaAs HJ-FET, X to Ku BAnd Low Noise And High-Gain, Gate Current 100 A
PC2746TB
Part Number : PC2746TB
California Eastern Laboratories (CEL)3 V, Super MINIMOLD Silicon MMIC WidebAnd Amplifier For Mobile Communications, GP = 19 dB TYP
UPC2749TB
Part Number : UPC2749TB
California Eastern Laboratories (CEL)3 V, Super MINIMOLD 1900 MHz SI RFIC Amplifier, GP = 16 dB TYP
PC2709TB
Part Number : PC2709TB
California Eastern Laboratories (CEL)5 V, Super MINIMOLD Silicon MMIC Medium Output Power Amplifier, GP = 23 dB
UPC3223TB
Part Number : UPC3223TB
California Eastern Laboratories (CEL)5 V, Silicon MMIC Medium Output Power Amplifier, GP = 23.0 dB TYP
PC8112TB
Part Number : PC8112TB
California Eastern Laboratories (CEL)Silicon MMIC 1ST Frequency Down-Converter For Cellular/Cordless Telephone
NE68019
Part Number : NE68019
California Eastern Laboratories (CEL)NPN Silicon High Frequency Transistor, Associated Gain = 9.6 dB TYP
NE85639
Part Number : NE85639
California Eastern Laboratories (CEL)NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 4-Pin MINIMOLD
NE202930
Part Number : NE202930
California Eastern Laboratories (CEL)Silicon NPN Epitaxial High Frequency Transistor, 11 Ghz TYP
2SC5337
Part Number : 2SC5337
California Eastern Laboratories (CEL)NPN Silicon RF Transistor For High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
NE664M04
Part Number : NE664M04
California Eastern Laboratories (CEL)NPN Silicon RF Transistor For Medium Output Power Amplification (0.4 W) Flat-Lead 4-Pin Thin-Type Super MINIMOLD
NE677M04
Part Number : NE677M04
California Eastern Laboratories (CEL)NPN Silicon RF Transistor For Medium Output Power Amplification (30 Mw) Flat-Lead 4-Pin Thin-Type Super MINIMOLD
NX7337BJ-AA
Part Number : NX7337BJ-AA
California Eastern Laboratories (CEL)1 310 nm InGaAsP MQW-FP Laser Diode Coaxial Module With MMF For OTDR Application
NX7537BF-AA
Part Number : NX7537BF-AA
California Eastern Laboratories (CEL)1 550 nm InGaAsP MQW-FP Laser Diode Coaxial Module For OTDR Application, High output power Pf = 120 mW MIN. @ IFP = 1 000 mA
NX6308GH
Part Number : NX6308GH
California Eastern Laboratories (CEL)1 310 nm InGaAsP MQW-DFB Laser Diode For 1.25 Gb/s FTTH PON Application
NX6309GH
Part Number : NX6309GH
California Eastern Laboratories (CEL)1 310 nm InGaAsP MQW-DFB Laser Diode For 1.25 Gb/s FTTH PON Application
NX6350EP31-AZ
Part Number : NX6350EP31-AZ
California Eastern Laboratories (CEL)1 310 nm AlGaInAs MQW-DFB Laser Diode For 40GBASE-LR4 Application
NX6350EP33-AZ
Part Number : NX6350EP33-AZ
California Eastern Laboratories (CEL)1 330 nm AlGaInAs MQW-DFB Laser Diode For 40GBASE-LR4 Application
NX6350GP31-AZ
Part Number : NX6350GP31-AZ
California Eastern Laboratories (CEL)1 310 nm AlGaInAs MQW-DFB Laser Diode For 40GBASE-LR4 & 10 Gb/s E-PON ONU Application
NX6350GP33-AZ
Part Number : NX6350GP33-AZ
California Eastern Laboratories (CEL)1 330 nm AlGaInAs MQW-DFB Laser Diode For 40GBASE-LR4 & 10 Gb/s E-PON ONU Application
