UPC2710TB
Part Number : UPC2710TB
California Eastern Laboratories (CEL)5V, Super MINIMOLD Medium Power SI MMIC Amplifier, GP = 33 dB TYP
UPC8172TB
Part Number : UPC8172TB
California Eastern Laboratories (CEL)Silicon RFIC 2.5 GHz Frequency Up-Converter For Wireless Transceiver
UPC2757TB
Part Number : UPC2757TB
California Eastern Laboratories (CEL)3 V, Super MINIMOLD SI MMIC Downconverter, Designed For Low Power Consumption
NE68030
Part Number : NE68030
California Eastern Laboratories (CEL)NPN Silicon High Frequency Transistor, Associated Gain = 9.4 dB TYP
NE68039
Part Number : NE68039
California Eastern Laboratories (CEL)NPN Silicon High Frequency Transistor, Associated Gain = 11 dB TYP
NE85633
Part Number : NE85633
California Eastern Laboratories (CEL)NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor For Microwave Low-Noise Amplification 3-Pin Minimold
NE97833
Part Number : NE97833
California Eastern Laboratories (CEL)PNP Silicon High Frequency Transistor, 5.5 GHz TYP
NE85630
Part Number : NE85630
California Eastern Laboratories (CEL)NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor For High-Frequency Low-Noise Amplification 3-Pin super Minimold
NE46234
Part Number : NE46234
California Eastern Laboratories (CEL)NPN Epitaxial Silicon RF Transistor For High-Frequency Low Distortion Amplifier 3-Pin Power MINIMOLD
NE85634
Part Number : NE85634
California Eastern Laboratories (CEL)NPN Epitaxial Silicon RF Transistor For High-Frequency Low-Noise Amplification 3-Pin Power MINIMOLD
UPA801T
Part Number : UPA801T
California Eastern Laboratories (CEL)NPN Silicon High Frequency Transistor, Low Noise Figure: NF = 1.2 dB TYP at 1 GHz
NE5550779A
Part Number : NE5550779A
California Eastern Laboratories (CEL)Silicon Power LDMOS FET, High Linear gain : GL = 22.0 dB TYP.
NE5550979A
Part Number : NE5550979A
California Eastern Laboratories (CEL)Silicon Power LDMOS FET, High Linear gain : GL = 22 dB TYP
NX7337BF-AA
Part Number : NX7337BF-AA
California Eastern Laboratories (CEL)1 310 nm InGaAsP MQW-FP Laser Diode Coaxial Module For OTDR Application
NX7339BB-AA
Part Number : NX7339BB-AA
California Eastern Laboratories (CEL)1 310 nm InGaAsP MQW-FP Laser Diode Coaxial Module For OTDR Application, High output power Pf = 50 mW @ IFP = 400 mA
NX7363JB-BC
Part Number : NX7363JB-BC
California Eastern Laboratories (CEL)InGaAsP MQW DC-PBH Pulsed Laser Diode Module 1 310 Nm OTDR Application, High output power Pf = 150 mW MIN. @ IFP = 1 000 mA, PW = 10 s, Duty = 1%
NX7538BF-AA
Part Number : NX7538BF-AA
California Eastern Laboratories (CEL)1 550 nm InGaAsP MQW-FP Laser Diode Coaxial Module For OTDR Application, High output power Pf = 80 mW @ IFP = 400 mA
NX7539BB-AA
Part Number : NX7539BB-AA
California Eastern Laboratories (CEL)1 550 nm InGaAsP MQW-FP Laser Diode Coaxial Module For OTDR Application, High output power Pf = 40 mW @ IFP = 400 mA
NX6350GP27-AZ
Part Number : NX6350GP27-AZ
California Eastern Laboratories (CEL)1 270 nm AlGaInAs MQW-DFB Laser Diode For 40GBASE-LR4 & 10 Gb/s E-PON ONU Application
NX6351GP29-AZ
Part Number : NX6351GP29-AZ
California Eastern Laboratories (CEL)1 290 nm AlGaInAs MQW-DFB Laser Diode For 9.8 Gb/s CPRI And 10G E-PON ONU Application
