Description

TRANSISTOR, RF; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:500mW; DC Collector Current:800mA; DC Current Gain hFE:270hFE; RF Transistor Case:SMD; No. of Pins:85Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017); Gain Bandwidth ft Typ:8GHz; Transistor Case Style:SMD