Description

TRANSISTOR, RF; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:8V; Transition Frequency ft:10GHz; Power Dissipation Pd:225mW; DC Collector Current:50mA; DC Current Gain hFE:270hFE; RF Transistor Case:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Junction Temperature Tj Max:+150°C; Junction Temperature Tj Min:-65°C; No. of Transistors:1; Output @ Third Order Intercept Point IP3:25dB; Termination Type:Surface Mount Device; Test Frequency:900MHz; Transistor Case Style:SOT-23