Description

RF TRANSISTOR, NPN, SOT-143; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:10GHz; Power Dissipation Pd:225mW; DC Collector Current:50mA; DC Current Gain hFE:150hFE; RF Transistor Case:SOT-143; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017); Associated Gain Ga:11dB; Continuous Collector Current Ic:50mA; Continuous Collector Current Ic Max:50mA; Current Ic Continuous a Max:50mA; Current Ic hFE:5mA; Gain Bandwidth ft Typ:10GHz; Hfe Min:30; Hfe NPN Device @ IC Min:30; No. of Transistors:1; Noise Figure Typ:1.7dB; Output @ Third Order Intercept Point IP3:25dB; Power @ 1dB Gain Compression, P1dB:14.5dBm; Power Dissipation Ptot Max:225mW; SMD Marking:415; Termination Type:Surface Mount Device; Test Frequency:2.4GHz; Transistor Case Style:SOT-143; Voltage Vcbo:20V; Voltage Vceo Max:12V