MOSFET Switching frequency: 500 kHz Current: 14A Temperature: 85 C; Gate drivers are specifically designed and tuned for optimal performance for driving APEI's 100/1000/2000/3000 series power modules

JFET Switching frequency: 100 kHz Current: 2A Temperature: 225 C; Gate drivers are specifically designed and tuned for optimal performance for driving APEI's 100/1000/2000/3000 series power modules

MOSFET Switching frequency: >100 kHz Current: 30A Temperature: 125 C; Gate drivers are specifically designed and tuned for optimal performance for driving APEI's 100/1000/2000/3000 series power modules

The APE HT-300 series is a hermetically sealed metal-ceramic line, offering high temperature operation up to 225 C, and significantly outperforms plastic packaged devices in both temperature and reliability Schottky Diode Voltage: 650V Current: 10A

The APE HT-300 series is a hermetically sealed metal-ceramic line, offering high temperature operation up to 225 C, and significantly outperforms plastic packaged devices in both temperature and reliability Schottky Diode Bridge Rectifier Voltage: 1200V Current: 5A

Hermetically sealed metal-ceramic line Schottky Diode Voltage: 1200V Current: 10A

Hermetically sealed metal-ceramic line Schottky Diode Voltage: 1200V Current: 20A

APEIs flagship power module line optimized for high performance commercial, industrial, and military systems such as hybrid electric vehicles or renewable energy applications MOSFET Voltage: 1200V Current: 225A

JFET Switching frequency: 500 kHz Current: 14A Temperature: 125 C; Gate drivers are specifically designed and tuned for optimal performance for driving APEI's 100/1000/2000/3000 series power modules

MOSFET Switching frequency: 500 kHz Current: 14A Temperature: 125 C; Gate drivers are specifically designed and tuned for optimal performance for driving APEI's 100/1000/2000/3000 series power modules